Position-controlled [100] InP nanowire arrays

被引：43

作者：

Wang, Jia ^{[1
]}

Plissard, Sebastien ^{[1
]}

Hocevar, Moira ^{[2
]}

Vu, Thuy T. T. ^{[1
]}

Zehender, Tilman ^{[1
]}

Immink, George G. W. ^{[3
]}

Verheijen, Marcel A. ^{[1
,3
]}

Haverkort, Jos ^{[1
]}

Bakkers, Erik P. A. M. ^{[1
,2
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

[3] Philips Innovat Serv Eindhoven, NL-5656 AE Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 05期

关键词：

TWINNING SUPERLATTICES; OPTICAL-PROPERTIES;

D O I：

10.1063/1.3679136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different parameters. A maximum yield of 56% is obtained and the tapering caused by lateral growth can be prevented by in situ HCl etching. Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679136]

引用

页数：3

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