Mapping Thermal Expansion Coefficients in Freestanding 2D Materials at the Nanometer Scale

被引:76
作者
Hu, Xuan [1 ]
Yasaei, Poya [2 ]
Jokisaari, Jacob [1 ]
Ogut, Serdar [1 ]
Salehi-Khojin, Amin [2 ]
Klie, Robert F. [1 ]
机构
[1] Univ Illinois, Dept Phys, Chicago, IL 60607 USA
[2] Univ Illinois, Dept Mech & Ind Engn, Chicago, IL 60607 USA
基金
美国国家科学基金会;
关键词
VOLUME-PLASMON ENERGY; TEMPERATURE-DEPENDENCE; RAMAN-SPECTRA; GRAPHENE; THERMOMETRY; SCATTERING; REDUCTION; DYNAMICS; 2H-MOS2; 2H-WSE2;
D O I
10.1103/PhysRevLett.120.055902
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Two-dimensional materials, including graphene, transition metal dichalcogenides and their heterostructures, exhibit great potential for a variety of applications, such as transistors, spintronics, and photovoltaics. While the miniaturization offers remarkable improvements in electrical performance, heat dissipation and thermal mismatch can be a problem in designing electronic devices based on two-dimensional materials. Quantifying the thermal expansion coefficient of 2D materials requires temperature measurements at nanometer scale. Here, we introduce a novel nanometer-scale thermometry approach to measure temperature and quantify the thermal expansion coefficients in 2D materials based on scanning transmission electron microscopy combined with electron energy-loss spectroscopy to determine the energy shift of the plasmon resonance peak of 2D materials as a function of sample temperature. By combining these measurements with first-principles modeling, the thermal expansion coefficients (TECs) of single-layer and freestanding graphene and bulk, as well as monolayer MoS2, MoSe2, WS2, or WSe2, are directly determined and mapped.
引用
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页数:6
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