Electrical properties of tin-doped indium oxide thin films prepared by a dip coating

被引：12

作者：

Seki, Y. ^{[1
]}

Sawada, Y. ^{[1
]}

Wang, M. H. ^{[1
]}

Lei, H. ^{[1
]}

Hoshi, Y. ^{[1
]}

Uchida, T. ^{[1
]}

机构：

[1] Tokyo Polytech Univ, Atsugi, Kanagawa 2430297, Japan

来源：

CERAMICS INTERNATIONAL | 2012年 / 38卷

关键词：

Films; Grain size; Electrical properties; In2O3; ETHANOL SOLUTION; DEPOSITION;

D O I：

10.1016/j.ceramint.2011.05.109

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Indium-tin-oxide (ITO) transparent conducting films were prepared by a dip coating process and heated in air at 1000 degrees C, which is much higher than the temperature applied in a normal dip coating process, where heating occurs at approximately 500 degrees C. This was done in order to enhance grain growth. Heat-resistant substrates silicon, sapphire and YSZ were used. Grain growth (average size = 52 nm), high carrier electron mobility (average value = 46 m(2) V-1 s(-1)) and low resistivity (average value = 3.7 x 10(-4) Omega cm) were all achieved successfully after post-deposition annealing at 600 degrees C in a N2-0.1%H2 atmosphere, for all of the films except the one deposited on a silicon substrate, whose respective values were 28 nm, 19 m(2) V-1 s(-1) and 1.0 x 10(-3) Omega cm. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：S613 / S616

页数：4

共 13 条

[1] Densification of In2O3:: Sn multilayered films elaborated by the dip-coating sol-gel route
Daoudi, K
Canut, B
Blanchin, MG
Sandu, CS
Teodorescu, VS
Roger, JA
[J]. THIN SOLID FILMS, 2003, 445 (01) : 20 - 25
[2] Wet chemical deposition of ATO and ITO coatings using crystalline nanoparticles redispersable in solutions
Goebbert, C
Nonninger, R
Aegerter, MA
Schmidt, H
[J]. THIN SOLID FILMS, 1999, 351 (1-2) : 79 - 84
[3] *JOINT COMM POWD D, 441087 JOINT COMM PO
[4] Preparation and electrical properties of ITO thin films by dip-coating process
Nishio, K
Sei, T
Tsuchiya, T
[J]. JOURNAL OF MATERIALS SCIENCE, 1996, 31 (07) : 1761 - 1766
[5] Indium-tin-oxide films prepared by dip coating using an ethanol solution of indium chloride and tin chloride
Ota, R
Seki, S
Sawada, Y
Ogawa, M
Nishide, T
Shida, A
Ide, M
[J]. SURFACE & COATINGS TECHNOLOGY, 2003, 169 : 521 - 524
[6] Fabrication of indium-tin-oxide films by dip coating process using ethanol solution of chlorides and surfactants
Ota, R
Seki, S
Ogawa, M
Nishide, T
Shida, A
Ide, M
Sawada, Y
[J]. THIN SOLID FILMS, 2002, 411 (01) : 42 - 45
[7] Dip coated ITO thin-films through sol-gel process using metal salts
Ramanan, SR
[J]. THIN SOLID FILMS, 2001, 389 (1-2) : 207 - 212
[8] Low-cost deposition of highly-conducting indium-tin-oxide transparent films by chemical process; spray CVD and dip coating
Sawada, Y
[J]. ADVANCED MATERIALS PROCESSING II, 2003, 437-4 : 23 - 26
[9] Seki Y., 2009, T MAT RES SOC JAPAN, V34, P246
[10] Formation of indium-tin-oxide films by dip coating process using indium dipropionate monohydroxide
Shigeno, E
Shimizu, K
Seki, S
Ogawa, M
Shida, A
Ide, A
Sawada, Y
[J]. THIN SOLID FILMS, 2002, 411 (01) : 56 - 59

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