Transport in asymmetric two-dimensional lateral surface superlattices

被引:0
作者
Chowdhury, S [1 ]
Long, AR [1 ]
Davies, JH [1 ]
Grant, DE [1 ]
Skuras, E [1 ]
Emeleus, CJ [1 ]
机构
[1] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
来源
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have studied square two-dimensional lateral surface superlattices of period 100 nm formed by shallow etching of holes into a GaAs/AlGaAs heterostructure. In some samples, the symmetry was broken using piezoelectric modulation. The commensurability oscillations in the magnetoresistance characteristics of our samples were fully in accord with a recent semi-classical model of guiding center drift in two-dimensional superlattices.
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页码:757 / 758
页数:2
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