Full band Monte Carlo simulation of cubic and hexagonal silicon carbide polytypes and devices

The GEMS (General Monte Carlo Semiconductor) simulator is a full band ensemble program developed at Mid-Sweden University. A principal objective of the project is to create a flexible tool that can be used for the exploration of properties of new semiconductor materials as well as devices fabricated of these materials. Both cubic and hexagonal crystal symmetries can be handled with the simulator, and any material with these symmetries can be simulated if an appropriate electronic band structure together with the parameters for the scattering mechanisms is provided. During the development of GEMS a large number of studies have been performed of bulk charge transport and device characteristics. The simulated materials are 2H-, 3C-, 4H- and 6H-SiC, as well as silicon. This presentation discusses the charge transport properties of the studied SiC polytypes, and the resulting performance of the simulated devices.