Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology

被引：31

作者：

Knoll, D ^{[1
]}

Heinemann, B ^{[1
]}

Osten, HJ ^{[1
]}

Ehwald, KE ^{[1
]}

Tillack, B ^{[1
]}

Schley, P ^{[1
]}

Barth, R ^{[1
]}

Matthes, M ^{[1
]}

Park, KS ^{[1
]}

Kim, Y ^{[1
]}

Winkler, W ^{[1
]}

机构：

[1] IHP, Inst Semicond Phys, D-15230 Frankfurt, Oder, Germany

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746454

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the high-frequency and DC performance of HBTs with LPCVD-grown epitaxial SiGe:C base layers. The devices were fabricated in an epi-free well, single-polysilicon technology. The HBTs show peak f(T) (f(max)) values up to 65 (90) GHz, and ring oscillator delays down to 16 ps. Excellent static parameters like (IB-driven) Early voltage-current gain products of > 20 000 V are also demonstrated.

引用

页码：703 / 706

页数：4

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