Terahertz oscillators using electron devices - an approach with Resonant tunneling diodes

被引:16
|
作者
Asada, Masahiro [1 ]
Suzuki, Safumi [1 ]
机构
[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Meguro Ku, Tokyo 1528552, Japan
来源
IEICE ELECTRONICS EXPRESS | 2011年 / 8卷 / 14期
关键词
terahertz oscillator; electron devices; resonant tunneling diode; SUB-TERAHERTZ; INJECTION-LOCKING; SLOT ANTENNAS; GHZ; CAPACITANCE; RESISTANCE; MILLIMETER; FREQUENCY;
D O I
10.1587/elex.8.1110
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Resonant tunneling diodes (RTDs) have the potential for compact and coherent terahertz (THz) sources operating at room temperature. In this paper, recent results of THz oscillators with RTDs are described. A fundamental oscillation frequency up to 831 GHz was achieved with RTD having high available current density and low capacitance. By the structure reducing the transit time, the frequency further increased to 1.04 THz. This is the first achievement of a fundamental oscillation above 1 THz in room-temperature electronic single oscillators. The output power of 400 mu W at 550 GHz was obtained in a single oscillator by the offset-fed slot antenna. Coherent power combining with multi-element array was observed. The spectral linewidth, frequency change with bias voltage, and direct modulation were also described.
引用
收藏
页码:1110 / 1126
页数:17
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