Planar concave grating demultiplexer with high reflective bragg reflector facets

被引：88

作者：

Brouckaert, J. ^{[1
]}

Bogaerts, W. ^{[1
]}

Selvaraja, S. ^{[1
]}

Dumon, P. ^{[1
]}

Baets, R. ^{[1
]}

Van Thourhout, D. ^{[1
]}

机构：

[1] Univ Ghent, Dept Informat Technol, Photon Res Grp, IMEC, B-9000 Ghent, Belgium

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 1-4期

关键词：

demultiplexing; diffraction; distributed Bragg reflector (DBR); grating; silicon-on-insulator (SOI);

D O I：

10.1109/LPT.2007.915585

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present measurement results of an ultracompact four-channel silicon-on-insulator planar concave grating demultiplexer fabricated in a complimentary metal-oxide-semiconductor line using deep-ultraviolet lithography. The demultiplexer has four output channels separated by 20 nm and a footprint of only 280 mu m x 150 mu m. The crosstalk is better than -25 dB and the on-chip loss is drastically reduced down to 1.9 dB by replacing each facet by a second-order Bragg reflector.

引用

页码：309 / 311

页数：3

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