Epitaxial growth of hexagonal CdS films on hydrogen-terminated Si(111) substrates

被引：8

作者：

Seto, S ^{[1
]}

Nosho, Y ^{[1
]}

Kousho, T ^{[1
]}

Kitani, H ^{[1
]}

Yamada, S ^{[1
]}

机构：

[1] Ishikawa Natl Coll Technol, Dept Elect Engn, Kahoku, Ishikawa 9290392, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 10A期

关键词：

CdS; Si(111); epitaxy; X-ray diffraction; photoluminescence; exciton;

D O I：

10.1143/JJAP.42.L1123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hexagonal US films were epitaxially grown directly on hydrogen-terminated Si(111) substrates with nominally 0degrees (just-orientated) and 3degrees-off-orientated surfaces by the hot-wall epitaxy technique. X-ray diffraction theta-2theta scans and pole figures confirmed the epitaxial relationship between the grown US film and Si substrate to be CdS(0001) parallel to Si(111) and CdS[11 (2) over bar0] parallel toSi[1 (1) over bar0]. Strong excitonic emissions as well as donor-acceptor pair emissions were observed for the US film grown on the 3degreesoff-orientated Si(111) substrate. In the US film on the just-orientated Si(111) substrate, on the other hand, no excitonic emissions could be observed.

引用

页码：L1123 / L1125

页数：3

共 14 条

[1] PHOTOLUMINESCENCE AND RAMAN STUDIES OF CDS FILMS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION ON SI(111) SUBSTRATES
BERRY, AK
AMIRTHARAJ, PM
DU, JT
BOONE, JL
MARTIN, DD
[J]. THIN SOLID FILMS, 1992, 219 (1-2) : 153 - 156
[2] STRUCTURE OF HEXAGONAL AND CUBIC CDS HETEROEPITAXIAL LAYERS ON GAAS STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY
CULLIS, AG
SMITH, PW
PARBROOK, PJ
COCKAYNE, B
WRIGHT, PJ
WILLIAMS, GM
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (20) : 2081 - 2083
[3] WURTZITE-TYPE CDS AND CDSE EPITAXIAL LAYERS .1. GROWTH AND CHARACTERIZATION
GRUN, M
HETTERICH, M
BECKER, U
GIESSEN, H
KLINGSHIRN, C
[J]. JOURNAL OF CRYSTAL GROWTH, 1994, 141 (1-2) : 68 - 74
[4] Heteroepitaxy of CuInS2 on Si(111)
Hunger, R
Scheer, R
Diesner, K
Su, D
Lewerenz, HJ
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (20) : 3010 - 3012
[5] ZnO growth on Si by radical source MBE
Iwata, K
Fons, P
Niki, S
Yamada, A
Matsubara, K
Nakahara, K
Tanabe, T
Takasu, H
[J]. JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 50 - 54
[6] Doping and intermixing in CdS/CdTe solar cells fabricated under different conditions
Jahn, U
Okamoto, T
Yamada, A
Konagai, M
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) : 2553 - 2558
[7] Growth of high-quality GaN on Si(111) substrate by ultrahigh vacuum chemical vapor deposition
Kim, MH
Bang, YC
Park, NM
Choi, CJ
Seong, TY
Park, SJ
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (19) : 2858 - 2860
[8] Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer
Nahhas, A
Kim, HK
Blachere, J
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (11) : 1511 - 1513
[9] MICROSTRUCTURE AND PHOTOLUMINESCENCE OF GAN GROWN ON SI(111) BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
OHTANI, A
STEVENS, KS
BERESFORD, R
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (01) : 61 - 63
[10] Crystalline structure of CdTe directly grown on hydrogen-terminated Si(111) without pre-heat treatment
Seto, S
Yamada, S
Miyakawa, T
Suzuki, K
[J]. JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) : 1585 - 1588

← 1 2 →