Temperature dependence of electronic parameters of organic Schottky diode based on fluorescein sodium salt

被引：38

作者：

Yahia, I. S. ^{[1
]}

Farag, A. A. M. ^{[1
]}

Yakuphanoglu, F. ^{[2
]}

Farooq, W. A. ^{[3
]}

机构：

[1] Ain Shams Univ, Fac Educ, Dept Phys, Cairo, Egypt

[2] Firat Univ, Dept Met & Mat Engn, TR-23169 Elazig, Turkey

[3] King Saud Univ, Coll Sci, Dept Phys & Astron, Riyadh 11451, Saudi Arabia

来源：

SYNTHETIC METALS | 2011年 / 161卷 / 9-10期

关键词：

Organic semiconductor; Al/FSS Schottky diode; Rectification; Current-voltage; Capacitance-voltage; CURRENT-VOLTAGE CHARACTERISTICS; PHOTOVOLTAIC CHARACTERISTICS; ELECTRICAL CHARACTERISTICS; SILICON HETEROJUNCTIONS; IMPEDANCE SPECTROSCOPY; CONDUCTION MECHANISM; TRANSPORT MECHANISMS; BULK HETEROJUNCTIONS; CAPACITANCE; JUNCTIONS;

D O I：

10.1016/j.synthmet.2011.02.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties of an organic Schottky diode based on fluorescein sodium salt were investigated by current density-voltage and capacitance-voltage measurements. The crystal structure of fluorescein sodium salt, FSS in powder form was analyzed by X-ray diffraction method. X-ray diffraction results showed that the fluorescein sodium salt has a polycrystalline structure with a monoclinic system. The current density-voltage and capacitance-voltage characteristics of Al/FSS Schottky diode were investigated in the temperature range of 300-400 K. The diode exhibits a rectifying behavior, indicating the formation of the Schottky type junction at the interface of Al/FSS. The predominant charge transport mechanism of the Al/FSS Schottky diode was discussed and the proposed current injection processes was presented. The temperature dependence of the calculated acceptor concentration, the built-in potential and the width of the depletion region of Al/FSS Schottky barrier was also determined. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：881 / 887

页数：7

共 41 条

[1] The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range [J].