Voltage-flux-characteristics of asymmetric dc SQUIDs

被引:19
作者
Müller, J
Weiss, S
Gross, R
Kleiner, R
Koelle, D
机构
[1] Univ Cologne, Inst Phys 2, Lehrstuhl Angew Phys, D-50937 Cologne, Germany
[2] Univ Tubingen, Phys Inst Expt Phys 2, D-72076 Tubingen, Germany
关键词
high-temperature superconductors; SQUIDs; superconducting devices;
D O I
10.1109/77.919493
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a detailed analysis of voltage-flux V(phi)-characteristics for asymmetric dc SQUIDs with various kinds of asymmetries. For finite asymmetry or in the critical currents of the two Josephson junctions, the minima in the V(phi)-characteristics for bias currents of opposite polarity are shifted along the flux axis by Delta phi = alpha (1)beta (L), relative to each other; pr. is the screening parameter. This simple relation allows the determination of or in our experiments on YBa2Cu3O7-delta dc SQUIDs and comparison with theory. Extensive numerical simulations within a wide range of pr and noise parameter Gamma reveal a systematic dependence of the transfer function V-phi on alpha (1) and alpha (R) (junction resistance asymmetry). As for the symmetric de SQUID, V phi factorizes into g(Gamma beta (L)) f(alpha (1),beta (L)), where now f also depends on alpha (1). For beta (L)less than or similar to5 we find mostly a decrease of V-phi with increasing alpha (1), which however can only partially account for the frequently observed discrepancy in V-phi between theory and experiment for high-Tc dc SQUIDs.
引用
收藏
页码:912 / 915
页数:4
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