Improved Switching Performance of a Novel Auxiliary Gate Raised Dual Material Hetero-Dielectric Double Gate Tunnel Field Effect Transistor

This paper suggested auxiliary gate raised dual material hetero-dielectric double-gate- tunnel-field-effect-transistor (DGTFET). The recommended device provides greater ON-state current (I-ON), larger ON/OFF current and lesser sub-threshold swing compared to conventional single material hetero-dielectric DGTFET. The raised gate at the drain terminal as well as use of dual material of the proposed DGTFET provides better performances by decreasing the tunneling barrier size on source channel junction for which band to band tunneling (BTBT) increases which in turns improves the ON-state current. The suggested device is found to have a higher ON/OFF ratio about 10(12) and subthreshold swing (SS) of 35 mV/dec in comparison to the conventional device.