A new modulation strategy for a buck-boost input ac/dc converter

被引:20
作者
Morrison, R [1 ]
Egan, MG
机构
[1] Univ Coll, PEI Technol, Cork, Ireland
[2] Univ Coll, Dept Microelect & Elect Engn, Cork, Ireland
关键词
buck-boost converter; inrush current limiting; integrated converter; leading trailing edge modulation; power-factor correction; zero-voltage switching;
D O I
10.1109/63.903987
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a novel modulation strategy for a power factor corrected (PFC), isolated ac/dc converter derived from the integration of a nonisolated, two switch buck-boost ac/dc converter with an isolated dual active bridge dc/dc converter (2SBBDAB). This strategy, termed discontinuous leading/trailing edge (DLTE) modulation, serves to maximize the duty cycle of the input switch while keeping the current in the buck-boost inductor discontinuous. Hence, the crest factors of the currents in the switching devices are minimized, the input switch is turned on at zero current and the zero-voltage switching ranges of the bridge switches are unaffected by the integration. A conventional isolated, PFC ac/dc converter typically consists of a boost converter cascaded with a forward converter. The ratings required or the power switching devices of the 2SBBDAB employing the DLTE modulation strategy are similar to those required of the conventional design for wide line voltage operation. However, the 2SBBDAB converter has higher line voltage surge immunity than that of the conventional design and, unlike the conventional design, it has inherent inrush current limiting. The DLTE modulation strategy may be applied to the family of converters composed of the two switch buck-boost integrated with half and full-bridge forward converters.
引用
收藏
页码:34 / 45
页数:12
相关论文
共 6 条
[1]   A new control strategy to achieve sinusoidal line current in a cascade buck-boost converter [J].
Ghanem, MC ;
AlHaddad, K ;
Roy, G .
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 1996, 43 (03) :441-449
[2]  
GHANEM MC, 1993, P IAS 93, V2, P785
[3]  
KOROTKOV S, 1998, P APEC 98, V1, P434
[4]  
MORRISON R, 1998, P APEC 98, V1, P237
[5]  
Sabate J. A., 1990, P IEEE APPL POW EL C, P275
[6]  
1988, VDE0160 GERM STAND