Screening of built-in electric fields in group III-nitride laser diodes observed by means of hydrostatic pressure

被引：2

作者：

Franssen, G ^{[1
]}

Suski, T ^{[1
]}

Perlin, P ^{[1
]}

Bohdan, R ^{[1
]}

Bercha, A ^{[1
]}

Adamiec, P ^{[1
]}

Dybala, F ^{[1
]}

Trzeciakowski, W ^{[1
]}

Kazlauskas, K ^{[1
]}

Tamulaitis, G ^{[1
]}

Zukauskas, A ^{[1
]}

Czernecki, R ^{[1
]}

Leszczbski, M ^{[1
]}

Grzegory, I ^{[1
]}

机构：

[1] Polish Acad Sci, High Pressure Res Ctr Unipress, PL-01142 Warsaw, Poland

来源：

E-MRS 2004 FALL MEETING SYMPOSIA C AND F | 2005年 / 2卷 / 03期

关键词：

D O I：

10.1002/pssc.200460612

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigate screening of polarization induced electric fields in a group Ill-nitride based laser diode with InGaN active layers. Via hydrostatic pressure dependent electroluminescence measurements and additional photocurrent spectroscopy experiments, it is shown that the introduction of Si doping with a concentration of 1.10(19) cm(-3) in the barriers of the active region leads to adequate screening of polarization induced electric fields. (c) 2005 WILEY-VCH Verlag GmbH W Co. KGaA, Weinheim.

引用

页码：1019 / 1022

页数：4

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