Optical investigation of p-type ZnO epilayers doped with different phosphorus concentrations by radio-frequency magnetron sputtering

被引：37
作者：
Kwon, B. J.
Kwack, H. S.
Lee, S. K.
Cho, Y. H.
Hwang, D. K.
Park, S. J.
机构：
[1] Chungbuk Natl Univ, Natl Res Lab Nano Biophoton, Phys Program BK21, Cheongju 361763, South Korea
[2] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea
[3] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
[4] Gwangju Inst Sci & Technol, Natl Res Lab Nanophoton Semicond, Kwangju 500712, South Korea
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 06期
关键词：
D O I：
10.1063/1.2767993
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical properties of p-type ZnO epilayers doped with different amounts of phosphorus by radio-frequency magnetron sputtering are investigated by x-ray diffraction, temperature dependent photoluminescence (PL), and time-resolved PL techniques. Bound exciton, free electrons-to-acceptors, donor-to-acceptor pair, and deep-level emissions are observed at about 3.356, 3.32, 3.24, and 2.4 eV at 10 K for p-type ZnO, respectively. The crystal quality and luminescence efficiency are improved with increasing phosphorus doping concentration. These results show that phosphorus doping plays an important role both in reducing native defects and in generating shallow acceptors in ZnO, leading to a good p-type conductivity in ZnO.
引用
收藏
页数：3
相关论文
共 16 条
[1]   ZnO as a novel photonic material for the UV region [J].
Chen, YF ;
Bagnall, D ;
Yao, TF .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 75 (2-3) :190-198
[2]   Transport properties of phosphorus-doped ZnO thin films [J].
Heo, YW ;
Park, SJ ;
Ip, K ;
Pearton, SJ ;
Norton, DP .
APPLIED PHYSICS LETTERS, 2003, 83 (06) :1128-1130
[3]  
Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495
[4]   Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering -: art. no. 151917 [J].
Hwang, DK ;
Kim, HS ;
Lim, JH ;
Oh, JY ;
Yang, JH ;
Park, SJ ;
Kim, KK ;
Look, DC ;
Park, YS .
APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3
[5]   Raman scattering and photoluminescence of As ion-implanted ZnO single crystal [J].
Jeong, TS ;
Han, MS ;
Youn, CJ ;
Park, YS .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) :175-179
[6]   High-quality ZnO epilayers grown on Zn-face ZnO substrates by plasma-assisted molecular beam epitaxy [J].
Kato, H ;
Sano, M ;
Miyamoto, K ;
Yao, T .
JOURNAL OF CRYSTAL GROWTH, 2004, 265 (3-4) :375-381
[7]   Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant [J].
Kim, KK ;
Kim, HS ;
Hwang, DK ;
Lim, JH ;
Park, SJ .
APPLIED PHYSICS LETTERS, 2003, 83 (01) :63-65
[8]   Doping by large-size-mismatched impurities:: The microscopic origin of arsenic- or antimony-doped p-type zinc oxide -: art. no. 155504 [J].
Limpijumnong, S ;
Zhang, SB ;
Wei, SH ;
Park, CH .
PHYSICAL REVIEW LETTERS, 2004, 92 (15) :155504-1
[9]   Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy [J].
Look, DC ;
Reynolds, DC ;
Litton, CW ;
Jones, RL ;
Eason, DB ;
Cantwell, G .
APPLIED PHYSICS LETTERS, 2002, 81 (10) :1830-1832
[10]   Recent advances in ZnO materials and devices [J].
Look, DC .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3) :383-387
12