Picosecond optical sampling method to measure S-parameter of microwave monolithic integrated circuit

被引：0
|
作者：
Lu, FY [1 ]
Yuang, SZ [1 ]
Pan, JQ [1 ]
Gai, Q [1 ]
Zhao, YC [1 ]
He, QG [1 ]
机构：
[1] Nankai Univ, Dept Phys, Tianjin 300071, Peoples R China
来源：
AUTOMATED OPTICAL INSPECTION FOR INDUSTRY: THEORY, TECHNOLOGY, AND APPLICATIONS II | 1998年 / 3558卷
关键词：
S-parameter; sampling technique; photoconductive switch;
D O I：
10.1117/12.318448
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The fundamental principles to measure S-parameter of microwave monolithic integrated circuit (MMIC) by photoconductive sampling technique has been reported. Photoconductive sampling technique has been used to measure the S-parameter of a wide-band (18-36GHz) low noise three-stage amplifier for the first time. The measurement results agree well with those measured by network analyzer. And a measurement band width of 100GHz has been achieved by photoconductive sampling technique.
引用
收藏
页码：595 / 600
页数：4
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