Transconductance improvement in surface-channel SiGe p-metal-oxide-silicon field-effect transistors using a ZrO2 gate dielectric

被引：16

作者：

Ngai, T ^{[1
]}

Qi, WJ ^{[1
]}

Sharma, R ^{[1
]}

Fretwell, JL ^{[1
]}

Chen, X ^{[1
]}

Lee, JC ^{[1
]}

Banerjee, SK ^{[1
]}

机构：

[1] Univ Texas, Ctr Microelect Res, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 20期

关键词：

D O I：

10.1063/1.1372204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon and surface-channel SiGe p-metal-oxide-silicon field-effect transistors (p-MOSFETs) using a ZrO2 gate dielectric with equivalent oxide thickness (EOT) less than 20 A was fabricated. These p-MOSFETs show similar behavior to that of other high-k gate dielectric p-MOSFETs reported in the literature, and mobility enhancement is observed in the surface-channel SiGe p-MOSFETs. (C) 2001 American Institute of Physics.

引用

页码：3085 / 3087

页数：3

共 12 条

[1]

GUO X, 1999, INT EL DEV M, P137

[2] Thermodynamic stability of binary oxides in contact with silicon [J].