Radio-frequency single-electron transistor as readout device for qubits: Charge sensitivity and backaction

被引：184

作者：

Aassime, A ^{[1
]}

Johansson, G

Wendin, G

Schoelkopf, RJ

Delsing, P

机构：

[1] Chalmers Univ Technol, Dept Microelect & Nanosci, Microtechnol Ctr Chalmers MC2, S-41296 Gothenburg, Sweden

[2] Univ Gothenburg, S-41296 Gothenburg, Sweden

[3] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[4] Yale Univ, Dept Phys, New Haven, CT 06520 USA

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.86.3376

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study the radio-frequency single-electron transistor (rf-SET) as a readout device for charge qubits. We measure the charge sensitivity of an rf-SET to be 6.3 mue/root Hz and evaluate the backaction of the rf-SET on a single Cooper-pair box. This allows us to compare the needed measurement time with the mixing time of the qubit imposed by the measurement. We find that the mixing time can be substantially longer than the measurement time, which would allow readout of the state of the qubit in a single shot measurement.

引用

页码：3376 / 3379

页数：4

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