InP HBT technology and applications

被引：3
|
作者：
Streit, DC [1 ]
Cowles, JC [1 ]
Kobayashi, KW [1 ]
Gutierrez-Aitken, A [1 ]
Block, TR [1 ]
Wojotowicz, M [1 ]
Yamada, F [1 ]
Kaneshiro, E [1 ]
Tran, LT [1 ]
Grossman, C [1 ]
Yang, LW [1 ]
Lammert, M [1 ]
Leslie, G [1 ]
Steel, V [1 ]
Denning, D [1 ]
Oki, AK [1 ]
机构：
[1] TRW Co Inc, Div Elect & Technol, Redondo Beach, CA 90278 USA
来源：
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ICIPRM.1998.712402
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
TRW has the world's only production Molecular Beam Epitaxy (MBE) based GaAs Heterojunction Bipolar Transistor (HBT) technology, delivering over 3 million commercial chips per month, as well as space qualified HBT MMICs. Using this foundation, we have developed the next generation InP-based HBT technology to produce advanced HBT integrated circuits for space and defense applications as well as high volume commercial applications. Here we present performance characteristics for InP HBT ICs for consumer products and advanced space and defense applications.
引用
收藏
页码：64 / 67
页数：4
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