Highly reliable gate oxide under Fowler-Nordheim electron injection by deuterium pyrogenic oxidation and deuterated poly-Si deposition

被引：13

作者：

Mitani, Y ^{[1
]}

Satake, H ^{[1
]}

Itoh, H ^{[1
]}

Toriumi, A ^{[1
]}

机构：

[1] Toshiba Corp, Adv LSI Technol Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904326

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the realization of highly reliable deuterated oxide by deuterium pyrogenic oxidation and poly-Si deposition using deuterated monosilane gas (SiD4). The properties of these deuterated oxides are compared with those of deuterium-annealed oxide. It is concluded that the improvement of the gate oxide reliability by a deuterium incorporation is dependent on the method whereby deuterium is incorporated into gate oxide film and that deuterium atoms, which is incorporated into both Si/SiO2 interface and bulk-SiO2 by the oxidation and poly-Si deposition, play an important role in the suppression of electron trap creation under Fowler-Nordheim (F-N) stress.

引用

页码：343 / 346

页数：4

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