Electrophoresis deposition of carbon nanotubes for triode-type field emission display

被引：233
|
作者：
Choi, WB [1 ]
Jin, YW [1 ]
Kim, HY [1 ]
Lee, SJ [1 ]
Yun, MJ [1 ]
Kang, JH [1 ]
Choi, YS [1 ]
Park, NS [1 ]
Lee, NS [1 ]
Kim, JM [1 ]
机构：
[1] Samsung Adv Inst Technol, Natl Creat Res Initiat Ctr Electron Emiss Source, Display Lab, Suwon 440600, South Korea
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 11期
关键词：
D O I：
10.1063/1.1349870
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A triode-type field emission display has been fabricated using carbon nanotube emitters. Purified single walled carbon nanotubes were selectively deposited onto a cathode electrode in a triode-type structure by an electrophoresis. Emission current was modulated with gate potentials of 100-300 V. A high brightness of 1000 cd/m(2) with uniform emission was obtained at 900 V at the anode and 200 V at the gate. The fluctuation of emission current was found to be less than 5% in a fully sealed field emission display. Selective deposition of carbon nanotubes by electrophoresis shows high feasibility for triode-type field emission displays. (C) 2001 American Institute of Physics.
引用
收藏
页码：1547 / 1549
页数：3
相关论文
共 50 条
  • [21] Undergate-type triode carbon nanotube field emission display with a microchannel plate
    Yu, S
    Jin, S
    Yi, W
    Kang, J
    Jeong, T
    Choi, Y
    Lee, J
    Heo, J
    Lee, NS
    Yoo, JB
    Kim, JM
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (10): : 6088 - 6091
  • [22] Electronic properties of phosphorus-doped triode-type diamond field emission arrays
    Chen, CF
    Tsai, CL
    Lin, CL
    MATERIALS CHEMISTRY AND PHYSICS, 2001, 72 (02) : 210 - 213
  • [23] Electrophoresis deposition and field emission characteristics of planar-gate-type electron source with carbon nanotubes
    Lu, Wenhui
    Song, Hang
    Jin, Yixin
    Zhao, Hui
    Zhao, Haifeng
    Cao, Lianzhen
    Li, Zhiming
    Jiang, Hong
    Miao, Guoqing
    PHYSICA B-CONDENSED MATTER, 2008, 403 (10-11) : 1793 - 1796
  • [24] Triode-type basic display structure using Si-doped AlN field emitters
    Taniyasu, Y
    Kasu, M
    Makimoto, T
    Kobayashi, N
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 200 (01): : 199 - 201
  • [25] Fabrication and characterization of phosphorus-doped diamond field emitters in triode-type field emission arrays
    Chen, CF
    Tsai, CL
    Lin, CL
    DIAMOND AND RELATED MATERIALS, 2001, 10 (3-7) : 834 - 839
  • [26] Emission current influence of gated structure and diamond emitter morphologies in triode-type field emission arrays
    Chen, CF
    Hsieh, HC
    DIAMOND AND RELATED MATERIALS, 2000, 9 (3-6) : 1257 - 1262
  • [27] Carbon nanotubes field emission integrated triode amplifier array
    Wong, Y. M.
    Kang, W. P.
    Davidson, J. L.
    Huang, J. H.
    DIAMOND AND RELATED MATERIALS, 2006, 15 (11-12) : 1990 - 1993
  • [28] Field emission triode in a multifinger configuration with carbon nanotubes emitters
    Brunetti, F.
    Ulisse, G.
    Ciceroni, C.
    Ricci, F.
    Gemma, F.
    Dispenza, M.
    Fiorello, A. M.
    Di Carlo, A.
    2013 13TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2013, : 397 - 400
  • [29] Field emission triode amplifier utilizing aligned carbon nanotubes
    Wong, YM
    Kang, WP
    Davidson, JL
    Choi, BK
    Hofmeister, W
    Huang, JH
    DIAMOND AND RELATED MATERIALS, 2005, 14 (11-12) : 2069 - 2073
  • [30] A high-performance triode-type carbon nanotube field emitter for mass production
    Van Quy, Nguyen
    Hoa, Nguyen Duc
    An, Myungchan
    Cho, Yousuk
    Kim, Dojin
    NANOTECHNOLOGY, 2007, 18 (34)
12345