Influence of the substrate on growth and magnetoresistance of La0.7Ca0.3MnOz thin films deposited by magnetron sputtering

被引:108
作者
Vlakhov, ES [1 ]
Chakalov, RA
Chakalova, RI
Nenkov, KA
Dorr, K
Handstein, A
Muller, KH
机构
[1] Inst Solid State Phys, BU-1784 Sofia, Bulgaria
[2] Bulgarian Acad Sci, Inst Elect, BU-1784 Sofia, Bulgaria
[3] Int Lab High Magnet Fields & Low Temp, PL-53529 Wroclaw, Poland
[4] Inst Festkorper & Werkstofforsch, D-01171 Dresden, Germany
关键词
D O I
10.1063/1.366952
中图分类号
O59 [应用物理学];
学科分类号
摘要
Off-axis radio frequency magnetron sputtering was employed to grow La0.7Ca0.3MnOz (LCMO) thin films onto three different types of substrates. The substrate strongly influences the structure and the colossal magnetoresistance effect of the obtained films. Single-crystalline thin films were prepared on LaAlO3 (100) substrates, showing a low value of residual resistivity and a metal-insulator transition at a temperature of up to T-peak=290 K. The latter value of the transition temperature is one of the highest reported so far on thin films of the La-Ca-Mn-O system. Films deposited onto Y-stabilized ZrO2 substrates and onto MgO substrates are polycrystalline and less textured. These films are characterized by a large negative magnetoresistance ratio MR=[R(H)-R(0)]/R(0) measured for small values of the magnetic field H. For H = 1.5 kOe, the MR was found to be approximately - 30%, - 20%, and - 8% at temperatures of 20, 77, and 180 K, respectively. The magnetoresistance of polycrystalline LCMO films shows two contributions, a low-field MR and a high-field MR, which are different in their dependence on temperature. The low-field MR is related to the magnetization process and can be attributed to scattering processes in domain walls or to tunneling of polarized charge carriers between the grains of the polycrystalline films. (C) 1998 American Institute of Physics.
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页码:2152 / 2157
页数:6
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