RF-Noise Modeling of InGaAs Metamorphic HEMTs and MOSFETs

被引：0

作者：

Heinz, F. ^{[1
,2
]}

Schwantuschke, D. ^{[1
]}

Leuther, A. ^{[1
]}

Tessmann, A. ^{[1
]}

Ohlrogge, M. ^{[1
]}

Quay, R. ^{[1
,2
]}

Ambacher, O. ^{[1
,2
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany

[2] Albert Ludwigs Univ Freiburg, Inst Sustainable Tech Syst INATECH, Georges Kohler Allee 101, D-79110 Freiburg, Germany

来源：

2018 13TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2018年

基金：

欧盟地平线“2020”;

关键词：

TECHNOLOGY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The mechanisms causing the RF-noise in InGaAs metamorphic HEMTs and MOSFETs have been investigated and compared. A small signal model for InGaAs-metamorphic HEMTs and InGaAs MOSFETs, including an accurate description of the RF-noise, is presented. The model is based on a distributed multiport-network approach, which is scalable in gate width, the number of gate-fingers and covers usual bias points used in amplifier circuits. The noise model is capable of analyzing the sources of noise in InGaAs HEMTs and MOSFETs and their impact on the overall device noise figure. The new extracted MOSFET model is verified on circuit level in the W-Band (75 to 110 GHz).

引用

页码：150 / 153

页数：4

共 9 条

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