Voltage dependence of two-step photocurrent generation in quantum dot intermediate band solar cells

被引：21

作者：

Elborg, Martin ^{[1
]}

Noda, Takeshi ^{[1
]}

Mano, Takaaki ^{[1
]}

Jo, Masafumi ^{[1
]}

Sakuma, Yoshiki ^{[1
]}

Sakoda, Kazuaki ^{[1
,2
]}

Han, Liyuan ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058577, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2015年 / 134卷

基金：

日本学术振兴会;

关键词：

Intermediate band solar cell; Quantum dot; Two-step photocurrent; Rate equation; High efficiency solar cell; Intersubband transition; ELECTRIC-FIELD; ESCAPE; TRANSITIONS;

D O I：

10.1016/j.solmat.2014.11.038

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We studied in detail the voltage dependence of two-step photocurrent generation through a two-step process of absorbing sub-band gap photons of different photon energies in a GaAs/AlGaAs quantum dot Intermediate Band Solar Cell. Our experiments revealed that two-step photocurrent generation is largely dependent on voltage, and exhibits a maximum at -0.3 V. A notable feature is a monotonic decrease in two-step photocurrent in the forward bias region, where the operating point of the solar cell lies. Using a model of rate equations, we extracted the voltage dependence of the individual escape and recombination rates, and found that the decrease in two-step photocurrent in the forward bias region is related to a monotonic increase in recombination rate in the quantum dots with increasing bias. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：108 / 113

页数：6

共 23 条

[1] Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell [J].