CMOS Photonics: A Platform for Optoelectronics Integration

被引:5
作者
Pinguet, Thierry [1 ]
Gloeckner, Steffen [1 ]
Masini, Gianlorenzo [1 ]
Mekis, Attila [1 ]
机构
[1] Luxtera Inc, Carlsbad, CA 92011 USA
来源
SILICON PHOTONICS II: COMPONENTS AND INTEGRATION | 2011年 / 119卷
关键词
WAVE-GUIDE PHOTODETECTORS; SILICON; DETECTOR; GE;
D O I
10.1007/978-3-642-10506-7_8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We describe the intimate relationship between process, devices, and system design by examining the development of Luxtera's CMOS Photonics technology. We address the challenges of integrating optoeletronic elements, including germanium photodiodes, in a commercial CMOS process without significantly affecting the electronics performance and the manufacturability of the process. The common practices of the electronics design and manufacturing industry are applied to our optoelectronic technology; we discuss our device library and our design and testing infrastructure in support of the engineering of complex optoelectronic circuits and systems. Finally, we use a complete monolithically integrated wavelength division multiplexed 40 Gbps transceiver chip as an example of the application of our complete technology platform and the demonstration of its capabilities for optoelectronic integration.
引用
收藏
页码:187 / 216
页数:30
相关论文
共 22 条
  • [1] BUILDING MANY-CORE PROCESSOR-TO-DRAM NETWORKS WITH MONOLITHIC CMOS SILICON PHOTONICS
    Batten, Christopher
    Joshi, Ajay
    Orcutt, Jason
    Khilo, Anatol
    Moss, Benjamin
    Holzwarth, Charles W.
    Popovic, Milos A.
    Li, Hanqing
    Smith, Henry I.
    Hoyt, Judy L.
    Kaertner, Franz X.
    Ram, Rajeev J.
    Stojanovic, Vladimir
    Asanovic, Krste
    [J]. IEEE MICRO, 2009, 29 (04) : 8 - 21
  • [2] Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si
    Colace, L
    Masini, G
    Galluzzi, F
    Assanto, G
    Capellini, G
    Di Gaspare, L
    Palange, E
    Evangelisti, F
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (24) : 3175 - 3177
  • [3] Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
    Currie, MT
    Samavedam, SB
    Langdo, TA
    Leitz, CW
    Fitzgerald, EA
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (14) : 1718 - 1720
  • [4] PHOTOVOLTAIC RESPONSE OF NGE-NSI HETERODIODES
    DONNELLY, JP
    MILNES, AG
    [J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 174 - &
  • [5] High performance germanium-on-silicon detectors for optical communications
    Famà, S
    Colace, L
    Masini, G
    Assanto, G
    Luan, HC
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (04) : 586 - 588
  • [6] Electrically pumped hybrid AlGaInAs-silicon evanescent laser
    Fang, Alexander W.
    Park, Hyundai
    Cohen, Oded
    Jones, Richard
    Paniccia, Mario J.
    Bowers, John E.
    [J]. OPTICS EXPRESS, 2006, 14 (20) : 9203 - 9210
  • [7] GUNN C, 2007, PHOTONICS SPECTR DEC
  • [8] Silicon photonics
    Jalali, Bahrain
    Fathpour, Sasan
    [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 2006, 24 (12) : 4600 - 4615
  • [9] 80-micron interaction length silicon photonic crystal waveguide modulator
    Jiang, YQ
    Jiang, W
    Gu, LL
    Chen, XN
    Chen, RT
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (22) : 1 - 3
  • [10] Net continuous wave optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering
    Jones, R
    Rong, HS
    Liu, AS
    Fang, AW
    Paniccia, MJ
    Hak, D
    Cohen, O
    [J]. OPTICS EXPRESS, 2005, 13 (02): : 519 - 525