Novel high-isolation FET switches

被引：10

作者：

Imai, N ^{[1
]}

Minakawa, A ^{[1
]}

Okazaki, H ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, WIRELESS SYST LABS, YOKOSUKA, KANAGAWA 23803, JAPAN

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1996年 / 44卷 / 05期

关键词：

D O I：

10.1109/22.493921

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes novel high-isolation monolithic microwave/millimeter-wave integrated circuit (MMIC) field-effect transistor (FET) switches that have higher isolation characteristics than conventional switches without much insertion loss degradation. The newly developed switches consist of series/shount FET's and T-shaped R-C-R circuit. Each FET switch utilizes the parasitic capacitive component of the FET's in the off-state to produce a band-rejection filter at the operating frequency. The design method of the newly proposed switches and their characteristics are described herein. With this method, the isolation characteristics are improved by more than 15 dB between 5.4 GHz and 6.4 GHz and more than 20dB between 5.5 GHz and 6.1 GHz over conventional values.

引用

页码：685 / 691

页数：7

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