Effect of sputtering input powers on CoSi2 thin films prepared by magnetron sputtering

被引：7

作者：

Cheng, FX ^{[1
]}

Jiang, CH ^{[1
]}

Wu, JS ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Minist Educ, Key Lab High Temp Mat & Tests, Shanghai 200030, Peoples R China

来源：

MATERIALS & DESIGN | 2005年 / 26卷 / 04期

基金：

中国国家自然科学基金;

关键词：

CoSi2; sputtering input powers; grain diameter; resistivity; magnetron sputtering;

D O I：

10.1016/j.matdes.2004.06.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CoSi2 thin films were prepared by radio frequency magnetron Sputtering using CoSi2 alloy target. Effect of sputtering input powers on characteristics of CoSi thin films was researched by X-ray diffraction (XRD), transparent electron microscope (TEM), energy dispersive X-ray analysis and four points probe, etc. It was shown that the deposition rate increased lineally, the selective Sputtering of silicon was strengthened, the (111) texture increased, and the resistivity decreased when the input powers were increased. (c) 2004 Elsevier Ltd. All rights reserved.

引用

页码：369 / 372

页数：4

共 18 条

[1] INTERFACIAL AND SURFACE ENERGETICS OF COSI2 [J].