Effect of Annealing on the Structural Electrical and Optical Properties of CdSe Thin Films

被引：0

作者：

Santhosh, T. C. M. ^{[1
]}

Bangera, Kasturi, V ^{[1
]}

Shivakumar, G. K. ^{[2
]}

机构：

[1] Natl Inst Technol, Dept Phys, Thin Film Lab, Mangalore 575025, Karnataka, India

[2] NMAM Inst Technol Nitte, Dept Phys, Karkala 574110, Karnataka, India

来源：

ADVANCED SCIENCE LETTERS | 2018年 / 24卷 / 08期

关键词：

CdSe; Annealing; Photoconductivity; PHOTOCONDUCTIVITY; GROWTH;

D O I：

10.1166/asl.2018.12180

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

CdSe thin films have been deposited on glass substrates at 453 K and subjected to post-deposition annealing. The effect of annealing on the properties of thermally evaporated CdSe thin films has been studied in detail. Structural and compositional studies have been carried out using X-ray diffraction, scanning electron microscopy (SEM) and energy dispersive analysis of X-ray (EDX) techniques. It is observed that as-deposited CdSe as well as annealed CdSe thin films exhibits hexagonal structure. The grain size was found to increase marginally with an increase in the annealing duration. The optical band gap of the grown films was evaluated from absorption measurements found to be 1.67 eV. An improvement in photoconductivity has been observed for annealed films.

引用

页码：5700 / 5702

页数：3

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