Controlling the growth interface shape in the growth of CdTe single crystals by the traveling heater method

被引：15

作者：

Dost, Sadik ^{[1
]}

Liu, YongCai ^{[1
]}

机构：

[1] Univ Victoria, Crystal Growth Lab, Victoria, BC V8W 3P6, Canada

来源：

COMPTES RENDUS MECANIQUE | 2007年 / 335卷 / 5-6期

关键词：

computation fluid mechanics; crystal growth; numerical analysis; interface shapes;

D O I：

10.1016/j.crme.2007.05.011

中图分类号：

O3 [力学];

学科分类号：

08 ; 0801 ;

摘要：

This article presents the results of a numerical simulation study carried out for controlling the growth interface shape in the THM (Traveling Heater Method) growth of CdTe single crystals. Applying different thermal boundary conditions and a crucible rotation, the optimum growth conditions for a desired interface shape were obtained. The simulation results show that by controlling the heat removal at the bottom of the crucible, a flatter (or slightly concave towards the crystal) growth interface can be maintained throughout the growth process. A crucible rotation rate of 5 rpm seems optimal for a favorable growth interface shape. To cite this article: S. Dost, Y.C. Liu, C. R. Mecanique 335 (2007). (C) 2007 Academie des sciences. Published by Elsevier Masson SAS. All rights reserved.

引用

页码：323 / 329

页数：7

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