CdS thin-films deposited by a modified chemical-bath deposition method

被引:22
作者
Vazquez-Luna, JG
Flores, RBL
Rubin-Falfan, M
Gomez-Pavon, LD
Lozada-Morales, R
Juarez-Santiesteban, H
Starostenko, O
Zelaya-Angel, O
Vigil, O
Guzman, O
del Angel, P
Gonzalez, A
机构
[1] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Dept Phys, Mexico City 07000, DF, Mexico
[2] BUAP, FCFM, Posgrado Optoelect, Puebla, Mexico
[3] IMP, Dept Electron Microscopy, Mexico City, DF, Mexico
[4] Univ La Habana, Fac Fis, La Habana, Cuba
关键词
chemical synthesis; thin films; semiconductors; anisotropy;
D O I
10.1016/S0022-0248(97)00817-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Cadmium sulphide polycrystalline thin films were prepared by chemical-bath deposition (CBD) method onto glass substrates at 80 degrees C. The modification to the traditional technique consists in applying a pulsed electric (E) external fields during the growth process. E was applied in two different orientations with respect to substrate plane surface (SPS): (a) parallel and (b) perpendicular. The as-deposited samples are hard and look yellowish with a shine and smooth surface. In both cases, X-ray diffractograms show slight differences in the crystalline structure, but optical reflection measurements reveal strong anisotropic characteristics, specially in case (b). Atomic force microscopy pictures evidence a large amount of valleys among crystalline grains. This is a resultant effect of the field action. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:380 / 386
页数:7
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