Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN

被引：10
作者：
Jiang, Fang [1 ,2 ,3 ]
Cai, Li-E [1 ,2 ,3 ]
Zhang, Jiang-Yong [1 ,2 ,3 ,4 ]
Zhang, Bao-Ping [1 ,2 ,3 ]
机构：
[1] Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Fujian, Peoples R China
[2] Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China
[3] Xiamen Univ, Pen Tung Sah Micro Nano Technol Res Ctr, Xiamen 361005, Fujian, Peoples R China
[4] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 09期
基金：
美国国家科学基金会;
关键词：
High reflective; p-GaN; AES; Optimal conditions; OHMIC CONTACTS; LOW-RESISTANCE; TI/AL/TI/AU;
D O I：
10.1016/j.physe.2010.05.027
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A metallization scheme of Ni/Ag/Ti/Au has been developed for obtaining high reflective contacts on p-type GaN. In order to find optimal conditions to get a high reflectivity, we studied samples with various Ni thicknesses, annealing temperatures and annealing times. By annealing at 500 degrees C for 5 min in an O-2 ambient, a reflectivity as high as 94% was obtained from Ni/Ag/Ti/Au (1/120/120/50 nm). The effects of Ti layers on the suppression of Ag agglomeration were investigated by using Auger electron spectroscopy (AES). From AES depth profiles, it is clear that Ti acts as a diffusion barrier to prevent Au atoms from diffusing into the Ag layer, which is important in the formation of high reflectivity. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码：2420 / 2423
页数：4
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