Piezoelectric cantilever microphone for photoacoustic GAS detector

被引:0
作者
Ledermann, N [1 ]
Baborowski, J
Seifert, A
Willing, B
Hiboux, S
Muralt, P
Setter, N
Forster, M
机构
[1] Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland
[2] Siemens Bldg Technol AG Cerberus Div, CH-8708 Mannedorf, Switzerland
关键词
MEMS; microphone; cantilever; piezoelectric;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
New micromachined pressure sensors based on PZT coated silicon cantilevers have been fabricated and integrated in a photoacoustic gas detector. PZT Sol-gel thin films texture and composition were optimized with respect to the transverse piezoelectric coefficient e(31,f). A best value of -12 C/m(2) was obtained with (100)/(001) textured thin films at the MPB composition. Optimum stress compensation between the different layers composing the cantilever has been studied in order to yield flat cantilevers. A high response of 150 mV/Pa with a S/N of 700 at 1 Pa and 1 Hz bandwidth has been measured. The influence of the damping chamber under the cantilever is also reported.
引用
收藏
页码:1907 / 1914
页数:8
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