XRD and RBS studies of quasi-amorphous zinc oxide layers produced by Atomic Layer Deposition

被引：4

作者：

Guziewicz, Elzbieta ^{[1
]}

Turos, Andrzej ^{[2
,3
]}

Stonert, Anna ^{[3
]}

Snigurenko, Dmytro ^{[1
]}

Witkowski, Bartlomiej S. ^{[1
]}

Diduszko, Ryszard ^{[2
]}

Behar, Moni ^{[4
]}

机构：

[1] Polish Acad Sci, Inst Phys, Al Lotnikow 32-46, PL-02668 Warsaw, Poland

[2] Inst Elect Mat Technol, Wolczynska 133, PL-01919 Warsaw, Poland

[3] Natl Ctr Nucl Res, Soltana 7, PL-04500 Otwock, Poland

[4] Univ Rio Grande do Sul, Inst Fis, BR-91501 Porto Alegre, RS, Brazil

来源：

THIN SOLID FILMS | 2016年 / 612卷

关键词：

ZNO;

D O I：

10.1016/j.tsf.2016.06.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Although zinc oxide has been widely investigated for many important applications such as laser diodes, photovoltaics, and sensors, some basic properties of this material have not been established up to now. One of these are stopping power values which are crucial for the Rutherford Backscattering Spectrometry analysis. For this kind of measurements, amorphous materials should be used. In this paper we show the results of stopping power measurements for ZnO films grown by Atomic Layer Deposition. The films were grown on a silicon (100) substrate and parameters of the growth were chosen in a way that prevents crystallization of ZnO films. A series of ZnO films with thickness between 20 and 160 nm have been investigated. Extended film characterization has proven that the obtained nanopolycrystalline ZnO films can be considered as truly amorphous with respect to ion beam applications. ZnO films have been used for precise stopping power measurement of MeV He-ions in the energy range from 200 to 5000 keV. These results provide indispensable data for ion beam modification and analysis of ZnO. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：337 / 341

页数：5

共 13 条

[1]

[Anonymous], 2009, SIMNRA USERS GUIDE 6

[2] HOW TO MEASURE ABSOLUTE STOPPING CROSS-SECTIONS BY BACKSCATTERING AND BY TRANSMISSION METHODS .1. BACKSCATTERING [J].

BAUER, P .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 27 (02) :301-314

[3] Energy loss of proton, α particle, and electron beams in hafnium dioxide films [J].

Behar, Moni ;

Fadanelli, Raul C. ;

Abril, Isabel ;

Garcia-Molina, Rafael ;

Denton, Cristian D. ;

Nagamine, Luiz C. C. M. ;

Arista, Nestor R. .

PHYSICAL REVIEW A, 2009, 80 (06)

[4]

Bethe H, 1930, ANN PHYS-BERLIN, V5, P325

[5] Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications [J].

Gieraltowska, S. ;

Wachnicki, L. ;

Witkowski, B. S. ;

Godlewski, M. ;

Guziewicz, E. .

THIN SOLID FILMS, 2012, 520 (14) :4694-4697

[6] ZnO by ALD - Advantages of the Material Grown at Low Temperature [J].

Guziewicz, E. ;

Godlewski, M. ;

Krajewski, T. A. ;

Wachnicki, L. ;

Luka, G. ;

Paszkowicz, W. ;

Domagala, J. Z. ;

Przezdziecka, E. ;

Lusakowska, E. ;

Witkowski, B. S. .

ACTA PHYSICA POLONICA A, 2009, 116 (05) :814-817

[7] Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors [J].

Kowalik, I. A. ;

Guziewicz, E. ;

Kopalko, K. ;

Yatsunenko, S. ;

Wojcik-Glodowska, A. ;

Godlewski, M. ;

Dluzewski, P. ;

Lusakowska, E. ;

Paszkowicz, W. .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (04) :1096-1101

[8] Energy loss of helium ions in zinc [J].

Lantschner, GH ;

Eckardt, JC ;

Lifschitz, AF ;

Arista, NR ;

Araujo, LL ;

Duarte, PF ;

dos Santos, JHR ;

Behar, M ;

Dias, JF ;

Grande, PL ;

Montanari, CC ;

Miraglia, JE .

PHYSICAL REVIEW A, 2004, 69 (06) :062903-1

[9]

Mayer M, 1999, AIP CONF PROC, V475, P541

[10]

Mertens P., 1987, TRANSMISSION NIMB, V27, P315

← 1 2 →