Synaptic behavior of Ni-Co layered double hydroxide-based memristor

被引：14

作者：

He, Nian ^{[1
,2
]}

Sun, Yanmei ^{[1
,2
]}

Wen, Dianzhong ^{[1
,2
]}

机构：

[1] Heilongjiang Univ, Sch Elect Engn, Harbin 150080, Peoples R China

[2] Heilongjiang Univ, HLJ Prov Key Labs Senior Educ Elect Engn, Harbin 150080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2021年 / 118卷 / 17期

关键词：

PERFORMANCE; ARRAYS; DEVICE; BRAIN;

D O I：

10.1063/5.0049349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The synaptic behavior of the Ni-Co layered double hydroxide-based memristor was demonstrated. The modulation effect of pulse amplitude, duration, and excitation interval on the conductance of memristor is analyzed. On account of analog resistive switching features, and the nonlinear transmission characteristics of synapses, pulse-time-dependent plasticity, long-term/short-term memory, and "learning" and "forgetting" behaviors of synapses are simulated and carried out. The analog bipolar resistance switch was ascribed to the formation and breakdown of oxygen filaments formed in Ni-Co layered double hydroxides films. This kind of memristor with an analog resistance switch is very promising to provide an implementation method for the development of electronic synapse function.

引用

页数：6

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