Synaptic behavior of Ni-Co layered double hydroxide-based memristor

被引：14
作者：
He, Nian [1 ,2 ]
Sun, Yanmei [1 ,2 ]
Wen, Dianzhong [1 ,2 ]
机构：
[1] Heilongjiang Univ, Sch Elect Engn, Harbin 150080, Peoples R China
[2] Heilongjiang Univ, HLJ Prov Key Labs Senior Educ Elect Engn, Harbin 150080, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2021年 / 118卷 / 17期
关键词：
PERFORMANCE; ARRAYS; DEVICE; BRAIN;
D O I：
10.1063/5.0049349
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The synaptic behavior of the Ni-Co layered double hydroxide-based memristor was demonstrated. The modulation effect of pulse amplitude, duration, and excitation interval on the conductance of memristor is analyzed. On account of analog resistive switching features, and the nonlinear transmission characteristics of synapses, pulse-time-dependent plasticity, long-term/short-term memory, and "learning" and "forgetting" behaviors of synapses are simulated and carried out. The analog bipolar resistance switch was ascribed to the formation and breakdown of oxygen filaments formed in Ni-Co layered double hydroxides films. This kind of memristor with an analog resistance switch is very promising to provide an implementation method for the development of electronic synapse function.
引用
收藏
页数：6
相关论文
共 47 条
[1]   Delay-Induced Multistability and Loop Formation in Neuronal Networks with Spike-Timing-Dependent Plasticity [J].
Asl, Mojtaba Madadi ;
Valizadeh, Alireza ;
Tass, Peter A. .
SCIENTIFIC REPORTS, 2018, 8
[2]   Dendritic and Axonal Propagation Delays Determine Emergent Structures of Neuronal Networks with Plastic Synapses [J].
Asl, Mojtaba Madadi ;
Valizadeh, Alireza ;
Tass, Peter A. .
SCIENTIFIC REPORTS, 2017, 7
[3]   Synaptic modifications in cultured hippocampal neurons: Dependence on spike timing, synaptic strength, and postsynaptic cell type [J].
Bi, GQ ;
Poo, MM .
JOURNAL OF NEUROSCIENCE, 1998, 18 (24) :10464-10472
[4]   Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application [J].
Cha, Euijun ;
Park, Jaehyuk ;
Woo, Jiyong ;
Lee, Daeseok ;
Prakash, Amit ;
Hwang, Hyunsang .
APPLIED PHYSICS LETTERS, 2016, 108 (15)
[5]   An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application [J].
Chekol, Solomon Amsalu ;
Song, Jeonghwan ;
Yoo, Jongmyung ;
Lim, Seokjae ;
Hwang, Hyunsang .
APPLIED PHYSICS LETTERS, 2019, 114 (10)
[6]   Polymer memristor for information storage and neuromorphic applications [J].
Chen, Yu ;
Liu, Gang ;
Wang, Cheng ;
Zhang, Wenbin ;
Li, Run-Wei ;
Wang, Luxing .
MATERIALS HORIZONS, 2014, 1 (05) :489-506
[7]   SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations [J].
Choi, Shinhyun ;
Tan, Scott H. ;
Li, Zefan ;
Kim, Yunjo ;
Choi, Chanyeol ;
Chen, Pai-Yu ;
Yeon, Hanwool ;
Yu, Shimeng ;
Kim, Jeehwan .
NATURE MATERIALS, 2018, 17 (04) :335-+
[8]   Do we have brain to spare? [J].
Drachman, DA .
NEUROLOGY, 2005, 64 (12) :2004-2005
[9]   HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks [J].
Garbin, Daniele ;
Vianello, Elisa ;
Bichler, Olivier ;
Rafhay, Quentin ;
Gamrat, Christian ;
Ghibaudo, Gerard ;
DeSalvo, Barbara ;
Perniola, Luca .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (08) :2494-2501
[10]   X-ray photoelectron spectroscopy: Towards reliable binding energy referencing [J].
Greczynski, G. ;
Hultman, L. .
PROGRESS IN MATERIALS SCIENCE, 2020, 107
12345