The Influence of Chromium Thermal-Diffusion-Based Doping on the Spatial Distribution of Luminescence Intensity in ZnSe

被引：3

作者：

Gladilin, A. ^{[1
]}

Uvarov, O. ^{[1
]}

Mironov, S. ^{[1
]}

Timofeeva, N. ^{[2
]}

Gavrischuk, E. ^{[2
]}

Kalinushkin, V. ^{[1
]}

机构：

[1] Russian Acad Sci, Prokhorov Gen Phys Inst, 38 Vavilova Str, Moscow 119991, Russia

[2] Russian Acad Sci, Devyatykh Inst Chem High Pur Subst, 49 Tropinina Str, Nizhnii Novgorod 603950, Russia

来源：

ACTA PHYSICA POLONICA A | 2019年 / 136卷 / 04期

基金：

俄罗斯基础研究基金会; 俄罗斯科学基金会;

关键词：

2-PHOTON CONFOCAL MICROSCOPY; IRON; CENTERS; TOMOGRAPHY; IONS;

D O I：

10.12693/APhysPolA.136.637

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied the influence of chromium doping of ZnSe crystals at 1250 degrees C on the spatial distribution of luminescence in the spectral range of 0.44 to 0.73 mu m. It is expected that several types of defective-impurity centers are formed due to the doping process. Centers of at least one type demonstrate complex distribution and lead to formation of area with high intensity luminescence looking like a bright strip parallel to doping surface.

引用

页码：637 / 639

页数：3

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