Suppressing the cellular breakdown in silicon supersaturated with titanium

被引：21

作者：

Liu, Fang ^{[1
,2
]}

Prucnal, S. ^{[1
]}

Huebner, R. ^{[1
]}

Yuan, Ye ^{[1
,2
]}

Skorupa, W. ^{[1
]}

Helm, M. ^{[1
,2
]}

Zhou, Shengqiang ^{[1
]}

机构：

[1] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, Bautzner Landstr 400, D-01328 Dresden, Germany

[2] Tech Univ Dresden, D-01062 Dresden, Germany

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2016年 / 49卷 / 24期

关键词：

ion implantation; solid phase epitaxy; liquid phase epitaxy; Si; cellular breakdown; ION-IMPLANTED SILICON; LASER IRRADIATION; PHASE EPITAXY; INTERFACE; CRYSTAL; GROWTH; RECRYSTALLIZATION; INSTABILITY; DEPENDENCE; DIFFUSION;

D O I：

10.1088/0022-3727/49/24/245104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy and solid phase epitaxy, respectively. Cross-sectional transmission electron microscopy of Ti-implanted Si after liquid phase epitaxy shows the so-called growth interface breakdown or cellular breakdown owing to the occurrence of constitutional supercooling in the melt. The appearance of cellular breakdown prevents further recrystallization. However, the out-diffusion and cellular breakdown can be effectively suppressed by solid phase epitaxy during flash lamp annealing due to the high velocity of amorphous-crystalline interface and the low diffusion velocity for Ti in the solid phase.

引用

页数：5

共 37 条

[1] Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting [J].