Preparation of nitrogen-doped ZnSe thin films by radical-assisted MOCVD

被引：1

作者：

Hara, Y ^{[1
]}

Yonekura, H ^{[1
]}

Noda, Y ^{[1
]}

机构：

[1] Tohoku Univ, Fac Engn, Dept Mat Sci, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

MATERIALS TRANSACTIONS JIM | 1998年 / 39卷 / 03期

关键词：

metalorganic chemical vapor deposition; zinc selenide; nitrogen doping; photoluminescence; bound exciton; nitrogen pair; net acceptor concentration;

D O I：

10.2320/matertrans1989.39.427

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Radical-assisted metalorganic chemical vapor deposition of ZnSe thin films was made using nitrogen trifluoride (NF3) as co-reactant and source of nitrogen atoms. The secondary ion mass spectroscopy analysis indicated that the concentration profile of nitrogen in a ZnSe film was not uniform in regard to the thickness and was the order of magnitude of 10(25)-10(26) m(-3). The photoluminescence (PL) spectra of all the films showed weak excitonic emission bound due to the neutral nitrogen atom pair (I-1(N-N)) and intense donor-acceptor pair emission (DAP). The net acceptor concentration obtained from capacitance-voltage measurements was 1.3 x 10(23) m(-3) at maximum, which increased to 1.3 x 10(24) m(-3) after heat-treatment.

引用

页码：427 / 431

页数：5

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