Modeling the enhancement of nanoscale MOSFETs by embedding carbon nanotubes in the channel

被引：0

作者：

Akturk, A ^{[1
]}

Pennington, G ^{[1
]}

Goldsman, N ^{[1
]}

机构：

[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA

来源：

2003 THIRD IEEE CONFERENCE ON NANOTECHNOLOGY, VOLS ONE AND TWO, PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

We report on predicting the improvement in conventional nanoscale MOSFET performance that is obtained when Carbon Nanotubes (CNTs) are placed in the device channel. We developed a CNT-MOSFET simulator, using Monte Carlo methods and a quantum drift-diffusion model. The simulation results indicate that performance is enhanced for MOSFETs with zigzag CNTs of diameters which are approximately 8Angstrom.

引用

页码：24 / 27

页数：4

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