Modeling the enhancement of nanoscale MOSFETs by embedding carbon nanotubes in the channel

被引：0
|
作者：
Akturk, A [1 ]
Pennington, G [1 ]
Goldsman, N [1 ]
机构：
[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA
来源：
2003 THIRD IEEE CONFERENCE ON NANOTECHNOLOGY, VOLS ONE AND TWO, PROCEEDINGS | 2003年
关键词：
D O I：
暂无
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
We report on predicting the improvement in conventional nanoscale MOSFET performance that is obtained when Carbon Nanotubes (CNTs) are placed in the device channel. We developed a CNT-MOSFET simulator, using Monte Carlo methods and a quantum drift-diffusion model. The simulation results indicate that performance is enhanced for MOSFETs with zigzag CNTs of diameters which are approximately 8Angstrom.
引用
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页码：24 / 27
页数：4
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