Photopatternable hydroxide ion electrolyte for solid-state micro-supercapacitors

被引:54
作者
Choi, Christopher [1 ]
Robert, Kevin [2 ,3 ]
Whang, Grace [1 ]
Roussel, Pascal [4 ]
Lethien, Christophe [2 ,3 ,5 ]
Dunn, Bruce [1 ]
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
[2] Univ Polytech Hauts De France, Inst Elect Microelect & Nanotechnol, Univ Lille, CNRS,Cent Lille,UMR 8520,IEMN, F-59000 Lille, France
[3] CNRS FR 3459, Reseau Sur Stockage Electrochim & Energie RS2E, 33 Rue St Leu, F-80039 Amiens, France
[4] Univ Artois, Unite Catalyse & Chim Solide UCCS, Univ Lille, CNRS,Cent Lille,UMR 8181,UCCS, F-59000 Lille, France
[5] Inst Univ France IUF, F-75005 Paris, France
关键词
hydroxide ion electrolytes; interdigitated electrodes; Internet-of-Things; micro-supercapacitors; on-chip energy storage; photolithography; photopatternable electrolytes; polymerizable ionic liquids; pseudocapacitive materials; solid electrolytes;
D O I
10.1016/j.joule.2021.07.003
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electrochemical energy storage (EES) devices that provide high power and energy for micropower systems are considered to be essential for developing micro/nano electronics such as nanorobotics, environmental sensors, and connected smart electronics. One promising research direction in this field has been to develop on-chip EES devices whose length scales integrate with those of miniaturized electronic devices. In the work described here, we provide the first report of a hydroxide-ion-conducting solid electrolyte that can be patterned using standard lithography. By combining a negative photoresist with a polymerizable ionic liquid, weobtain a thermally and dimensionally stable, hydroxide-ion-conducting solid electrolyte with a conductivity of 10 mS cm(-1). Patterning the solid electrolyte directly on interdigitated vanadium nitride (VN) electrodes enables a scalable fabrication approach for producing high-resolution, solid-state VN micro-super-capacitors (MSC) in both single and multiple devices.
引用
收藏
页码:2466 / 2478
页数:13
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