Strain effects on the electronic properties of devices made of twisted graphene layers

被引：0
作者：
Viet-Hung Nguyen [1 ]
Saint-Martin, Jerome [1 ]
Dollfus, Philippe [1 ]
Huy-Viet Nguyen [2 ]
机构：
[1] Univ Paris Saclay, Univ Paris Sud, CNRS, Inst Elect Fondamentale, Orsay, France
[2] VAST, Ctr Computat Phys, Inst Phys, Hanoi, Vietnam
来源：
18TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2015) | 2015年
关键词：
Graphene; Strain; Van Hove singularity; Conduction gap; HETEROSTRUCTURES; BILAYER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of uniaxial strain on the electronic and transport properties of twisted graphene bilayer structures are investigated by means of atomistic simulation. It is shown that the strain-induced modulation of band structure makes it possible to break the degeneracy and to modulate the position van Hove singularities. It is even possible to observe low-energy saddle points for a large range of twist angles. It is shown also that the strain-induced separation of Dirac points of the two lattices may generate a finite transport gap as large as a few hundreds of meV for a small strain of a few percent.
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页数：3
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  • [1] Graphene nanomesh transistor with high on/off ratio and good saturation behavior
    Berrada, Salim
    Viet Hung Nguyen
    Querlioz, Damien
    St-Martin, Jerome
    Alarcon, Alfonso
    Chassat, Christophe
    Bournel, Arnaud
    Dollfus, Philippe
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (18)
  • [2] Unraveling the Intrinsic and Robust Nature of van Hove Singularities in Twisted Bilayer Graphene by Scanning Tunneling Microscopy and Theoretical Analysis
    Brihuega, I.
    Mallet, P.
    Gonzalez-Herrero, H.
    de laissardiere, G. Trambly
    Ugeda, M. M.
    Magaud, L.
    Gomez-Rodriguez, J. M.
    Yndurain, F.
    Veuillen, J. -Y.
    [J]. PHYSICAL REVIEW LETTERS, 2012, 109 (19)
  • [3] Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
    Britnell, L.
    Gorbachev, R. V.
    Jalil, R.
    Belle, B. D.
    Schedin, F.
    Mishchenko, A.
    Georgiou, T.
    Katsnelson, M. I.
    Eaves, L.
    Morozov, S. V.
    Peres, N. M. R.
    Leist, J.
    Geim, A. K.
    Novoselov, K. S.
    Ponomarenko, L. A.
    [J]. SCIENCE, 2012, 335 (6071) : 947 - 950
  • [4] Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
    Ferrari, Andrea C.
    Bonaccorso, Francesco
    Fal'ko, Vladimir
    Novoselov, Konstantin S.
    Roche, Stephan
    Boggild, Peter
    Borini, Stefano
    Koppens, Frank H. L.
    Palermo, Vincenzo
    Pugno, Nicola
    Garrido, Jose A.
    Sordan, Roman
    Bianco, Alberto
    Ballerini, Laura
    Prato, Maurizio
    Lidorikis, Elefterios
    Kivioja, Jani
    Marinelli, Claudio
    Ryhaenen, Tapani
    Morpurgo, Alberto
    Coleman, Jonathan N.
    Nicolosi, Valeria
    Colombo, Luigi
    Fert, Albert
    Garcia-Hernandez, Mar
    Bachtold, Adrian
    Schneider, Gregory F.
    Guinea, Francisco
    Dekker, Cees
    Barbone, Matteo
    Sun, Zhipei
    Galiotis, Costas
    Grigorenko, Alexander N.
    Konstantatos, Gerasimos
    Kis, Andras
    Katsnelson, Mikhail
    Vandersypen, Lieven
    Loiseau, Annick
    Morandi, Vittorio
    Neumaier, Daniel
    Treossi, Emanuele
    Pellegrini, Vittorio
    Polini, Marco
    Tredicucci, Alessandro
    Williams, Gareth M.
    Hong, Byung Hee
    Ahn, Jong-Hyun
    Kim, Jong Min
    Zirath, Herbert
    van Wees, Bart J.
    [J]. NANOSCALE, 2015, 7 (11) : 4598 - 4810
  • [5] Strain-induced conduction gap in vertical devices made of misoriented graphene layers
    Hung Nguyen, V.
    Huy-Viet Nguyen
    Saint-Martin, J.
    Dollfus, P.
    [J]. NANOTECHNOLOGY, 2015, 26 (11)
  • [6] Improved performance of graphene transistors by strain engineering
    Hung Nguyen, V.
    Huy-Viet Nguyen
    Dollfus, P.
    [J]. NANOTECHNOLOGY, 2014, 25 (16)
  • [7] Observation of Van Hove singularities in twisted graphene layers
    Li, Guohong
    Luican, A.
    Lopes dos Santos, J. M. B.
    Castro Neto, A. H.
    Reina, A.
    Kong, J.
    Andrei, E. Y.
    [J]. NATURE PHYSICS, 2010, 6 (02) : 109 - 113
  • [8] Strain-induced modulation of Dirac cones and van Hove singularities in a twisted graphene bilayer
    Nguyen, V. Hung
    Dollfus, P.
    [J]. 2D MATERIALS, 2015, 2 (03):
  • [9] Tight-binding approach to uniaxial strain in graphene
    Pereira, Vitor M.
    Castro Neto, A. H.
    Peres, N. M. R.
    [J]. PHYSICAL REVIEW B, 2009, 80 (04)
  • [10] Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance
    Viet Hung Nguyen
    Saint-Martin, Jerome
    Querlioz, Damien
    Mazzamuto, Fulvio
    Bournel, Arnaud
    Niquet, Yann-Michel
    Dollfus, Philippe
    [J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2013, 12 (02) : 85 - 93
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