Hydrogen passivation of nitrogen in SiC

被引:21
作者
Gali, A
Deák, P
Son, NT
Janzén, E
机构
[1] Budapest Univ Technol & Econ, Dept Atom Phys, H-1111 Budapest, Hungary
[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
关键词
D O I
10.1063/1.1604461
中图分类号
O59 [应用物理学];
学科分类号
摘要
First-principles calculations carried out in 4H-SiC show that hydrogen may form stable complexes with substitutional nitrogen, passivating the shallow nitrogen donor. The complex is very stable with respect to isolated positive donors and negatively charged hydrogen interstitials, so reactivation is expected only at high temperature. The binding energy also increases the concentration of hydrogen, incorporated into 4H-SiC during growth or postgrowth hydrogenation. (C) 2003 American Institute of Physics.
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收藏
页码:1385 / 1387
页数:3
相关论文
共 25 条
[1]   Hydrogen passivation of silicon carbide by low-energy ion implantation [J].
Achtziger, N ;
Grillenberger, J ;
Witthuhn, W ;
Linnarsson, MK ;
Janson, MS ;
Svensson, BG .
APPLIED PHYSICS LETTERS, 1998, 73 (07) :945-947
[2]   Passivation of p-type dopants in 4H-SiC by hydrogen [J].
Aradi, B ;
Gali, A ;
Deák, P ;
Son, NT ;
Janzén, E .
PHYSICA B-CONDENSED MATTER, 2001, 308 :722-725
[3]   Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC -: art. no. 245202 [J].
Aradi, B ;
Gali, A ;
Deák, P ;
Lowther, JE ;
Son, NT ;
Janzén, E ;
Choyke, WJ .
PHYSICAL REVIEW B, 2001, 63 (24)
[4]   Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics [J].
Bockstedte, M ;
Kley, A ;
Neugebauer, J ;
Scheffler, M .
COMPUTER PHYSICS COMMUNICATIONS, 1997, 107 (1-3) :187-222
[5]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[6]   ACCEPTOR AND DONOR NEUTRALIZATION BY HYDROGEN IN 6H SIC [J].
CLERJAUD, B ;
GENDRON, F ;
PORTE, C ;
WILKENING, W .
SOLID STATE COMMUNICATIONS, 1995, 93 (05) :463-464
[7]   Boron and aluminium doping in SiC and its passivation by hydrogen [J].
Deák, P ;
Aradi, B ;
Gali, A .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (40) :9019-9026
[8]   Vacancies and their complexes with H in SiC [J].
Deák, P ;
Gali, A ;
Aradi, B ;
Son, NT ;
Janzén, E ;
Choyke, WJ .
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :817-820
[9]  
DEAK P, 2003, MAJOR ADV SIC, pCH3
[10]  
Fukumoto A, 1997, PHYS STATUS SOLIDI B, V202, P125, DOI 10.1002/1521-3951(199707)202:1<125::AID-PSSB125>3.0.CO