The domain wall structure in disordered ferroelectrics

被引：2

作者：

Kirichenko, EV ^{[1
]}

Sobolewska, A ^{[1
]}

Stephanovich, VA ^{[1
]}

机构：

[1] Univ Opole, Dept Math & Informat, PL-45052 Opole, Poland

来源：

FERROELECTRICS | 2003年 / 288卷

关键词：

disordered dielectric; impurity concentration; domain wall thickness;

D O I：

10.1080/00150190390211693

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We calculate the structure of 180degrees domain wall in disordered ferroelectrics with random site electric dipoles (i.e. those like K1-xLixTaO3, KTa1-xNbxO3). The calculation is performed on the basis of a free energy functional of disordered dielectrics derived by us earlier [2] within the framework of a random local field method. We obtain the domain wall thickness as a function of impurity dipole concentration n and temperature T. It is shown that in disordered ferroelectric the domain wall is usually broader that in their ordered counterparts; the thickness increases infinitely near phase transition temperature and critical concentration of dipoles.

引用

页码：211 / 219

页数：9