Ink-Jet-Printed Zinc-Tin-Oxide Thin-Film Transistors and Circuits With Rapid Thermal Annealing Process

被引：40

作者：

Kim, Yong-Hoon ^{[1
,2
]}

Kim, Kwang-Ho ^{[1
,3
]}

Oh, Min Suk ^{[1
]}

Kim, Hyun Jae ^{[3
]}

Han, Jeong In ^{[4
]}

Han, Min-Koo ^{[2
]}

Park, Sung Kyu ^{[5
]}

机构：

[1] Korea Elect Technol Inst, Flexible Display Res Ctr, Songnam 463816, South Korea

[2] Seoul Natl Univ, Dept Elect Engn, Seoul 151742, South Korea

[3] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[4] Dongguk Univ, Dept Chem & Biochem Engn, Seoul 100715, South Korea

[5] Chonbuk Natl Univ, Dept Text Engn, Convergence Mat & Devices Res Lab, Jeonju 561756, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 08期

关键词：

Ink-jet printing; rapid thermal annealing; thin-film transistor; zinc-tin-oxide;

D O I：

10.1109/LED.2010.2051404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on high-performance ink-jet-printed amorphous zinc-tin-oxide (alpha-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed alpha-ZTO layer was directly printed on source/drain electrodes and then thermally treated by using rapid thermal annealing process. The ink-jet-printed a-ZTO TFTs (W/L = 100 mu m/10 mu m) have shown a carrier mobility of 4.98 cm(2)/V . s with an on/off current ratio that is greater than 10(9) and a subthreshold slope of 0.92 V/dec. The alpha-ZTO TFT-based inverter operation was good with acceptable logic level conservation.

引用

页码：836 / 838

页数：3

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