Charge density wave sliding driven by an interplay of conventional and Hall voltages in NbSe3 microbridges

被引:3
|
作者
Frolov, A., V [1 ]
Orlov, A. P. [1 ,2 ]
Sinchenko, A. A. [1 ,3 ]
Monceau, P. [4 ,5 ,6 ]
机构
[1] RAS, Kotelnikov Inst Radioengn & Elect, Moscow 125009, Russia
[2] RAS, Inst Nanotechnol Microelect, Moscow 115487, Russia
[3] Moscow MV Lomonosov State Univ, Moscow 119991, Russia
[4] Univ Grenoble Alpes, Inst Neel, CNRS, F-38042 Grenoble, France
[5] CNRS, Inst Neel, F-38042 Grenoble, France
[6] Univ Grenoble Alpes, Univ Toulouse Paul Sabatier, CNRS LNCMI, INSA Toulouse, F-38000 Grenoble, France
关键词
AC-DC INTERFERENCE; MAGNETORESISTANCE; CONDUCTIVITY; OSCILLATIONS; CRYSTALS;
D O I
10.1103/PhysRevB.100.245126
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Collective charge-density wave (CDW) transport was measured under a high magnetic field in NbSe3 microbridges which have been cut transversely and at an angle to the chains' direction. We give evidence that the CDW sliding is driven by the Hall voltage generated by the interchain current of normal carriers. We have discovered a reentrance effect of the Hall-driven sliding above a crossover temperature at which the Hall constant has been known to change signs. For the narrow channel, cut at 45 degrees relative to the chain axis, we observed an evolution from the Hall-driven sliding at low temperatures, to the conventional sliding at higher temperatures, which corroborates with falling of the Hall constant. In this course, the nonlinear contribution to the conductivity coming from the collective sliding changes signs. The quantization of Shapiro steps, generated presumably by a coherent sequence of phase slips, indicates that their governing changes from the applied voltage to the current.
引用
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页数:5
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