Electrical and Optical Properties of Diketopyrrolopyrrole-Based Copolymer Interfaces in Thin Film Devices

被引：18

作者：

Adil, Danish ^{[2
]}

Kanimozhi, Catherine ^{[1
]}

Ukah, Ndubuisi ^{[2
]}

Paudel, Keshab ^{[2
]}

Patil, Satish ^{[1
]}

Guha, Suchi ^{[2
]}

机构：

[1] Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India

[2] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2011年 / 3卷 / 05期

基金：

美国国家科学基金会;

关键词：

diketopyrrolopyrrole; donor-acceptor; metal-insulator-semiconductor; field-effect transistors; capacitance-voltage characteristics; Raman scattering; LOW-BAND-GAP; HIGHLY LUMINESCENT; POLYMER; FIELD; MOBILITY; OLIGOTHIOPHENE; EFFICIENCY; STATES; CORE; DPP;

D O I：

10.1021/am200028u

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Two donor acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) have been synthesized for their application in organic devices such as metal-insulator semiconductor (MIS) diodes and field-effect transistors (FETs). The semiconductor-dielectric interface was characterized by capacitance-voltage and conductance-voltage methods. These measurements yield an interface trap density of 4.2 x 10(12) eV(-1) cm(-2) in TDPP-BBT and 3.5 x 10(12) eV(-1) cm(-2) in PDPP-BBT at the flat-band voltage. The FETs based on these spincoated DPP copolymers display p-channel behavior with hole mobilities of the order 10(-3) cm(2)/(V s). Light scattering studies from PDPP-BBT FETs show almost no change in the Raman spectrum after the devices are allowed to operate at a gate voltage, indicating that the FETs suffer minimal damage due to the metal-polymer contact or the application of an electric field. As a comparison Raman intensity profile from the channel-Au contact layer in pentacene FETs are presented, which show a distinct change before and after biasing.

引用

页码：1463 / 1471

页数：9

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