Electrical and Optical Properties of Diketopyrrolopyrrole-Based Copolymer Interfaces in Thin Film Devices

被引:18
|
作者
Adil, Danish [2 ]
Kanimozhi, Catherine [1 ]
Ukah, Ndubuisi [2 ]
Paudel, Keshab [2 ]
Patil, Satish [1 ]
Guha, Suchi [2 ]
机构
[1] Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India
[2] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA
基金
美国国家科学基金会;
关键词
diketopyrrolopyrrole; donor-acceptor; metal-insulator-semiconductor; field-effect transistors; capacitance-voltage characteristics; Raman scattering; LOW-BAND-GAP; HIGHLY LUMINESCENT; POLYMER; FIELD; MOBILITY; OLIGOTHIOPHENE; EFFICIENCY; STATES; CORE; DPP;
D O I
10.1021/am200028u
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two donor acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) have been synthesized for their application in organic devices such as metal-insulator semiconductor (MIS) diodes and field-effect transistors (FETs). The semiconductor-dielectric interface was characterized by capacitance-voltage and conductance-voltage methods. These measurements yield an interface trap density of 4.2 x 10(12) eV(-1) cm(-2) in TDPP-BBT and 3.5 x 10(12) eV(-1) cm(-2) in PDPP-BBT at the flat-band voltage. The FETs based on these spincoated DPP copolymers display p-channel behavior with hole mobilities of the order 10(-3) cm(2)/(V s). Light scattering studies from PDPP-BBT FETs show almost no change in the Raman spectrum after the devices are allowed to operate at a gate voltage, indicating that the FETs suffer minimal damage due to the metal-polymer contact or the application of an electric field. As a comparison Raman intensity profile from the channel-Au contact layer in pentacene FETs are presented, which show a distinct change before and after biasing.
引用
收藏
页码:1463 / 1471
页数:9
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