Performance analysis of GaAs based solar cells under gamma irradiation

被引：31

作者：

Papez, Nikola ^{[1
]}

Gajdos, Adam ^{[1
]}

Dallaev, Rashid ^{[1
]}

Sobola, Dinara ^{[1
,2
]}

Sedlak, Petr ^{[1
,2
]}

Motuz, Rastislav ^{[3
]}

Nebojsa, Alois ^{[2
]}

Grmela, Lubomir ^{[1
]}

机构：

[1] Brno Univ Technol, Fac Elect Engn & Commun, Dept Phys, Tech 2848-8, Brno 61600, Czech Republic

[2] Cent European Inst Technol, Brno Univ Technol, Purkynova 123, Brno 61600, Czech Republic

[3] Brno Univ Technol, Fac Elect Engn & Commun, Dept Theoret & Expt Elect Engn, Tech 3082-12, Brno 61200, Czech Republic

来源：

APPLIED SURFACE SCIENCE | 2020年 / 510卷

关键词：

Gallium arsenide; Radiation; Degradation; Cobalt-60; Solar cells; SURFACE-ROUGHNESS; RADIATION; MICROSCOPY; DEFECTS;

D O I：

10.1016/j.apsusc.2020.145329

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The influence of gamma irradiation on gallium arsenide based photovoltaic cells was investigated. This type of solar cell is used for advanced space application where radiation degradation occurs in particular. A synthetic radioactive isotope of cobalt Co-60 was used with an applied dose of up to 500 kGy. These irradiation cause damage and degradation of the solar cell. A wide range of comparative characterisation methods was performed before and after irradiation. The effect of radiation on material morphology was described using electron and atomic force microscopy. Structural changes were investigated by Secondary Ion Mass Spectrometry (SIMS) with Time-of-Flight mass analysis (TOF) and Raman spectroscopy analysis. Also, the changes in noise fluctuations and current-voltage characteristics of the cell in the dark and under illumination were measured. Based on experimental measurements, the degradation was observed in the structural, optical and material cell properties as well as in electrical parameters.

引用

页数：8

共 30 条

[1] Improved radiation resistant properties of electron irradiated c-Si solar cells [J].

Ali, Khuram ;

Khan, Sohail A. ;

MatJafri, M. Z. .

RADIATION PHYSICS AND CHEMISTRY, 2016, 125 :220-226

[2]

[Anonymous], [No title captured]

[3]

[Anonymous], [No title captured]

[4] Photovoltaic module parameters acquisition model [J].

Cibira, Gabriel ;

Koscova, Marcela .

APPLIED SURFACE SCIENCE, 2014, 312 :74-80

[5] Stress in GaAs at the hetero-interface of ZnSe/GaAs/GaAs:: a possible effect of pit filling and difference in thermal expansion coefficients [J].

Constantino, ME ;

Navarro-Contreras, H ;

Vidal, MA ;

Salazar-Hernández, B ;

Lastras-Martínez, A ;

Hernández-Calderón, I ;

López-López, M .

APPLIED SURFACE SCIENCE, 1999, 151 (3-4) :271-279

[6] AFM imaging and fractal analysis of surface roughness of AIN epilayers on sapphire substrates [J].

Dallaeva, Dinara ;

Talu, Stefan ;

Stach, Sebastian ;

Skarvada, Pavel ;

Tomanek, Pavel ;

Grmela, Lubomir .

APPLIED SURFACE SCIENCE, 2014, 312 :81-86

[7] Composition of the surface layer of GaAs after laser annealing of the Al-GaAs system [J].

Demireva, D ;

Ziffudin, L .

APPLIED SURFACE SCIENCE, 2001, 173 (3-4) :184-192

[8] Gamma radiation effect on the GaAs solar cell performance [J].

Feteha, MY .

2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, :91-96

[9] Local investigation of thermal dependence of light emission from reverse-biased monocrystalline silicon solar cells [J].

Grmela, Lubomir ;

Skarvada, Pavel ;

Tomanek, Pavel ;

Macku, Robert ;

Smith, Steve .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 96 (01) :108-111

[10] RADIATION SENSITIVITY AND AMORPHOUS MATERIALS-PRESENT AND FUTURE [J].

HOLMESSIEDLE, AG .

REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (06) :699-769

← 1 2 3 →