Stability enhancement in InGaZnO thin-film transistor with a novel Al2O3/HfO2/Al2O3 as gate insulator

被引：1

作者：

Ding, Xingwei ^{[1
,2
]}

Qin, Cunping ^{[1
,2
]}

Xu, Tao ^{[1
]}

Song, Jiantao ^{[1
]}

Zhang, Jianhua ^{[1
,2
]}

Jiang, Xueyin ^{[3
]}

Zhang, Zhilin ^{[1
,3
]}

机构：

[1] Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, 149 Yanchang Rd, Shanghai 200070, Peoples R China

[2] Shanghai Univ, Sch Mechatron & Automat, Shanghai, Peoples R China

[3] Shanghai Univ, Dept Mat Sci, Shanghai, Peoples R China

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2017年 / 651卷 / 01期

关键词：

a-IGZO; Al2O3/HfO2/Al2O3; density-of-states; thin film transistors; ELECTRICAL-PROPERTIES; OXIDE; LAYER; THICKNESS; PERFORMANCE; DIELECTRICS;

D O I：

10.1080/15421406.2017.1338408

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This work reports an efficient route for enhancing the stability of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). It is clearly observed that the off-current in IGZO-TFT decreases by using a novel Al2O3/HfO2/Al2O3 gate insulator. Temperature-stress measurement were carried out to investigate the stability and the parameters related to activation energy (E-A) and density-of-states (DOS). The improved electrical properties are attributed to the suppression of leakage current and a lower trapping density at the channel-insulator interface. The results showed that temperature stability and electrical properties enhancements in a-IGZO thin film transistors can probably be ascribed to the smaller DOS.

引用

页码：235 / 242

页数：8

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